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Artigo de periodico
Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects (2023)
Allegro, Paula Rangel Pestana ; Aguiar, Vitor Ângelo Paulino de ; Added, Nemitala ; Medina, Nilberto Heder; Macchione, Eduardo Luiz Augusto ; Alberton, Saulo Gabriel Pereira Nascimento
Source: Microelectronics Reliability. Unidade: IF
Assunto: RADIAÇÃO IONIZANTE
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ABNT
ALLEGRO, Paula Rangel Pestana et al. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, v. 142, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2023.114916. Acesso em: 01 maio 2024.
APA
Allegro, P. R. P., Aguiar, V. Â. P. de, Added, N., Medina, N. H., Macchione, E. L. A., & Alberton, S. G. P. N. (2023). Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, 142. doi:10.1016/j.microrel.2023.114916
NLM
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916
Vancouver
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916
Artigo de periodico
Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET (2022)
Alberton, S. G. ; Aguiar, Vitor ; Medina, Nilberto H. ; Added, Nemitala ; Macchione, E L A ; Menegasso, R. ; Cesário, G. J.; Santos, Hellen Cristine ; Scarduelli, V B ; Alcántara-Núñez, J. A.; Guazzelli, M. A.; Santos, R. B. B.; Flechas, D.
Source: Microelectronics Reliability. Unidade: IF
Subjects: FÍSICA NUCLEAR, ÍONS PESADOS, SEMICONDUTORES
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ABNT
ALBERTON, S. G. et al. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2022.114784. Acesso em: 01 maio 2024.
APA
Alberton, S. G., Aguiar, V., Medina, N. H., Added, N., Macchione, E. L. A., Menegasso, R., et al. (2022). Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, 137. doi:10.1016/j.microrel.2022.114784
NLM
Alberton SG, Aguiar V, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784
Vancouver
Alberton SG, Aguiar V, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784
Artigo de periodico
Ionizing radiation hardness tests of GaN HEMTs for harsh environments (2021)
Vilas Bôas, Alexis C.; Melo, M.A.A. de; Santos, R. B. B.; Giacomini, R.; Medina, Nilberto H. ; Seixas, L. E.; Finco, S.; Palomo, F. R.; Romero-Maestre, A.; Guazzelli, Marcilei A.
Source: Microelectronics Reliability. Unidade: IF
Subjects: FÍSICA NUCLEAR, RADIAÇÃO IONIZANTE, ELETRÔNICA QUÂNTICA, NANOTECNOLOGIA
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ABNT
VILAS BÔAS, Alexis C. et al. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. Microelectronics Reliability, v. 116, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2020.114000. Acesso em: 01 maio 2024.
APA
Vilas Bôas, A. C., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R., Medina, N. H., Seixas, L. E., et al. (2021). Ionizing radiation hardness tests of GaN HEMTs for harsh environments. Microelectronics Reliability, 116. doi:10.1016/j.microrel.2020.114000
NLM
Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Ionizing radiation hardness tests of GaN HEMTs for harsh environments [Internet]. Microelectronics Reliability. 2021 ; 116[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2020.114000
Vancouver
Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Ionizing radiation hardness tests of GaN HEMTs for harsh environments [Internet]. Microelectronics Reliability. 2021 ; 116[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2020.114000
Artigo de periodico
Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits (2019)
Goerl, Roger; Villa, Paulo; Vargas, Fabian L; Marcon, César A; Medina, Nilberto Heder ; Added, Nemitala ; Guazzelli, Marcilei A
Source: Microelectronics Reliability. Unidade: IF
Subjects: RADIAÇÃO IONIZANTE, INTERFERÊNCIA ELETROMAGNÉTICA, CIRCUITOS INTEGRADOS
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ABNT
GOERL, Roger et al. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits. Microelectronics Reliability, v. 100–101, p. 113341-7, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2019.06.033. Acesso em: 01 maio 2024.
APA
Goerl, R., Villa, P., Vargas, F. L., Marcon, C. A., Medina, N. H., Added, N., & Guazzelli, M. A. (2019). Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits. Microelectronics Reliability, 100–101, 113341-7. doi:10.1016/j.microrel.2019.06.033
NLM
Goerl R, Villa P, Vargas FL, Marcon CA, Medina NH, Added N, Guazzelli MA. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits [Internet]. Microelectronics Reliability. 2019 ; 100–101 113341-7.[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2019.06.033
Vancouver
Goerl R, Villa P, Vargas FL, Marcon CA, Medina NH, Added N, Guazzelli MA. Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits [Internet]. Microelectronics Reliability. 2019 ; 100–101 113341-7.[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2019.06.033
Artigo de periodico
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014)
Caño de Andrade, Maria Glória; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Aoulaiche, Marc; Martino, João Antonio
Source: Microelectronics Reliability. Unidade: EP
Subjects: SILÍCIO, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAÑO DE ANDRADE, Maria Glória et al. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, v. 54, n. 11, p. 2349-2354, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2014.06.013. Acesso em: 01 maio 2024.
APA
Caño de Andrade, M. G., Collaert, N., Simoen, E., Claeys, C., Aoulaiche, M., & Martino, J. A. (2014). Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, 54( 11), 2349-2354. doi:10.1016/j.microrel.2014.06.013
NLM
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
Vancouver
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013

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